Challenges in SiC power MOSFET design

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1631-1635

  Matocha, Kevin ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

Hard switching; Interface states; Power MOSFET; Silicon carbide

Indexed keywords

CAPACITANCE; DRAIN CURRENT; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; LOGIC DESIGN; MOSFET DEVICES; SILICON; SILICON CARBIDE; SURFACE ROUGHNESS;

HARD-SWITCHING; INTERFACE STATES; POWER MOSFET; POWER-MOSFETS; TECHNOLOGICAL PARAMETERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 50949090419     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.034     Document Type: Article

References (10)

1. Rao Ramakrishna R., Balaji S., Matocha K., and Tilak V. An approach to model temperature effects of interface traps in 4H-SiC. Mater Sci Forum 556-667 (2007) 497-500
2. Arnold E., and Alok D. Effect of interface states on electron transport in 4H-SiC inversion layers. IEEE Trans Electron Dev 48 (2001) 1870-1877
3. Li H.-F., Dimitrijev S., Sweatman D., and Harrison H.B. Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors. J Electron Mater 29 (2000) 1027-1032
4. Potbhare S., Goldsman N., Pennington G., Lelis A., and McGarrity J.M. Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor. J Appl Phys 1000 (2006) 044515
5. 2/4H-SiC interface. IEEE Trans Electron Dev 50 (2003) 1582-1588
6. Tilak V., Matocha K., and Dunne G. Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers. IEEE Trans Electron Dev 54 (2007) 2823-2829
7. Agarwal A.K., Seshadri S., and Rowland L.B. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. IEEE Electron Dev Lett 18 (1997) 592-594
8. Singh R., and Hefner A.R. Reliability in SiC MOS devices. Solid-State Electron 48 (2004) 1717-1720
9. Schlund B.J., Suehle J., Messick C., and Chaparala P. New physics-based model for time-dependent dielectric breakdown. Microelectron Reliab 36 (1996) 1655-1658
10. DiMaria D.J., Cartier E., and Arnold D. Impact ionization trap creation degradation and breakdown in silicon dioxide films on silicon. J Appl Phys 73 (1993) 3367-3384