600V GaN schottky barrier power devices for high volume and low cost applications

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1251-1256

  Liu, Linlin ^a   Zhu, Ting Gang ^a   Murphy, Michael ^a   Pabisz, Marek ^a   Pophristic, Milan ^a   Peres, Boris ^a   Hierl, Tom ^a  

^a Velox Semiconductor Corporation   (United States)

Author keywords

Conductive atomic force microscope (CAFM); Conductive dislocation; Diode; Gan; Isolated frame package; Reverse recovery; Schottky barrier diode; SiC; Switch mode power supplies (SMPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEFECTS; DIODES; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INSULATION; LATTICE MISMATCH; POWER SEMICONDUCTOR DEVICES; SAPPHIRE; SCHOTTKY BARRIER DIODES; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS;

CONDUCTIVE ATOMIC FORCE MICROSCOPE; CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVE DISLOCATION; GAN; ISOLATED FRAME PACKAGE; REVERSE RECOVERY; SI DEVICES; SIC DEVICES; SWITCH MODE POWER SUPPLY; SWITCH-MODE POWER SUPPLIES;

SILICON CARBIDE;

EID: 56349093583     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1251     Document Type: Conference Paper

References (4)

1. Isaac Cohen, TingGang Zhu, Linlin Liu, Michael Murphy, Milan Pophristic, Marek Pabisz, Mark Gottfried, Bryan S. Shelton, Boris Peres, Alex Ceruzzi and Rick A. Stall: 12th Annual IEEE Applied Power Electronics Conference and Exposition, Vol. 1 (2005), p. 311
2. Milan Pophristic, Isaac Cohen: available on the Velox Semiconductor website at: http://www.veloxsemi.com/
3. Bryan Shelton: US Patent # 7, 084, 475
4. TingGang Zhu: US Patent Application # 20060151868