High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 103, Issue 11, 2013, Pages

  Fiorenza, P ^a   Greco, G ^a   Fisichella, G ^a,b   Roccaforte, F ^a   Malandrino, G ^b   Lo Nigro, R ^a  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HETEROSTRUCTURES; CERIUM OXIDE THIN FILMS; GAN-BASED HETEROSTRUCTURES; GATE DIELECTRIC LAYERS; HIGH PERMITTIVITY; INSULATING PROPERTIES; LOW-POWER CONSUMPTION; METAL INSULATOR SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTORS (MISHEMT);

GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; OXIDES; PERMITTIVITY; THIN FILMS;

GALLIUM NITRIDE;

EID: 84884226371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4820795     Document Type: Article

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