Band alignment and defect states at SiC/oxide interfaces

Journal of Physics Condensed Matter

Volumn 16, Issue 17, 2004, Pages

  Afanas'ev, V V ^a   Ciobanu, F ^b   Dimitrijev, S ^c   Pensl, G ^b   Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC INSULATORS; ELECTRON TRANSITIONS; ELECTRON TRAPS; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MOS DEVICES; OXIDATION; PASSIVATION; PHOTOEMISSION;

ENERGY DISTIBUTION; INTERNAL ELECTRON PHOTOEMISSION (IEP); INTRINSIC PROPERTIES; SURFACE PREPARATION;

SILICON CARBIDE;

EID: 2442685851     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/17/019     Document Type: Review

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