Scaling between channel mobility and interface state density in SiC MOSFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3808-3811

  Rozen, John ^a   Ahyi, Ayayi C ^b   Zhu, Xingguang ^c   Williams, John R ^b   Feldman, Leonard C ^c,d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b AUBURN UNIVERSITY   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

Charge carrier mobility; interface state density; MOS devices; nitrogen incorporation; semiconductor insulator interfaces; silicon carbide

Indexed keywords

CHANNEL MOBILITY; CHARGED STATE; DIRECT IMPACT; GATE OXIDE; GATE POTENTIALS; INTERFACE STATE DENSITY; MOSFETS; NITROGEN INCORPORATION; SEMICONDUCTOR-INSULATOR INTERFACE; SUBTHRESHOLD SWING; TRAP DISTRIBUTIONS; TURN-ON CHARACTERISTICS;

MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON OXIDES;

CARRIER MOBILITY;

EID: 80054952383     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2164800     Document Type: Article

References (15)

1. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, and L. C. Feldman, "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide", IEEE Electron Device Lett., vol. 22, no. 4, pp. 176-178, Apr. 2001. (Pubitemid 32406808)
2. E. Arnold and D. Alok, "Effect of interface states on electron transport in 4H-SiC inversion layers", IEEE Trans. Electron Devices, vol. 48, no. 9, pp. 1870-1877, Sep. 2001. (Pubitemid 32926692)
3. V. Tilak, K. Matocha, and G. Dunne, "Electron-scattering mechanisms in heavily doped silicon carbide MOSFET inversion layers", IEEE Trans. Electron Devices, vol. 54, no. 11, pp. 2823-2829, Nov. 2007. (Pubitemid 350129800)
4. A. Poggi, F. Moscatelli, S. Solmi, and R. Nipoti, "Investigation on the use of nitrogen implantation to improve the performance of n-channel enhancement 4H-SiC MOSFETs", IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2021-2028, Aug. 2008.
5. 2 on SiC", J. Appl. Phys., vol. 105, no. 12, p. 124506, Jun. 2009.
6. J. Rozen, X. Zhu, A. C. Ahyi, J. R. Williams, and L. C. Feldman, "The limits of post oxidation annealing in NO", Mater. Sci. Forums, vol. 645-648, pp. 693-696, Apr. 2010.
7. X. Zhu, H. D. Lee, T. Feng, A. C. Ahyi, D. Mastrogiovanni, A. Wan, E. Garfunkel, J. R. Williams, T. Gustafsson, and L. C. Feldman, "Structure and stoichiometry of (0001) 4H-SiC/oxide interface", Appl. Phys. Lett., vol. 97, no. 7, p. 071908, Aug. 2010.
8. 2 interface and the effects of nitrogen and hydrogen", Phys. Rev. Lett., vol. 98, no. 2, p. 026101, Jan. 2007.
9. 2/4H-SiC interfaces", Appl. Phys. Lett., vol. 92, no. 10, p. 102112, Mar. 2008.
10. J. A. Cooper, Jr., "Advances in SiC MOS Technology", Phys. Stat. Sol. (A), vol. 162, no. 1, pp. 305-320, Jul. 1997. (Pubitemid 127607391)
11. J. R. Brews, "A charge-sheet model of the MOSFET", Solid State Electron., vol. 21, no. 2, pp. 345-355, Feb. 1978.
12. S. Potbhare, N. Goldsman, A. Akturk, M. Gurfinkel, A. Lelis, and J. S. Suehle, "Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs", IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2061-2070, Aug. 2008.
13. K. Chatty, V. Khemka, T. P. Chow, and R. J. Gutmann, "Re-oxidation characteristics of oxynitrides on 3C-and 4H-SiC", J. Electron. Mater., vol. 28, no. 3, pp. 161-166, Mar. 1999.
14. T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, "Epitaxial silicon oxynitride layer on a 6H-SiC (0001) surface", Phys. Rev. Lett., vol. 98, no. 13, p. 136105, Mar. 2007.
15. J. Rozen, M. Nagano, H. Tsuchida, "Enhancing interface quality by gate dielectric deposition on a nitrogen-conditioned 4H-SiC surface", to be published.