Temperature dependence of inversion layer carrier concentration and Hall mobility in 4H-SiC MOSFETs

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 713-716

  Dhar, Sarit ^a   Ahyi, Ayayi C ^b   Williams, John R ^b   Ryu, Sei Hyung ^a   Agarwal, Anant K ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

4H SiC MOSFET; Band tail states; Carrier concentration; Hall measurements; Mobility; Thermally activated; Trapping

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; MOSFET DEVICES; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

4H-SIC MOSFET; BAND-TAIL STATE; HALL MEASUREMENTS; THERMALLY ACTIVATED; TRAPPING;

HALL MOBILITY;

EID: 84861401406     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.713     Document Type: Conference Paper

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