Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 100, Issue 6, 2012, Pages

  Roccaforte, Fabrizio ^a   Greco, Giuseppe ^a,b   Fiorenza, Patrick ^a   Raineri, Vito ^a   Malandrino, Graziella ^c   Lo Nigro, Raffaella ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; FILM QUALITY; METAL-INSULATOR-SEMICONDUCTORS; METAL-ORGANIC; NI FILMS; REPRODUCIBILITIES; SCHOTTKY; SCHOTTKY DIODES; THERMAL OXIDATION;

EPITAXIAL GROWTH; GALLIUM NITRIDE; GATE DIELECTRICS; MIS DEVICES; NICKEL OXIDE; SCHOTTKY BARRIER DIODES;

EPITAXIAL FILMS;

EID: 84857206972     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684625     Document Type: Article

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