Effects of nitridation in gate oxides grown on 4H-SiC

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5058-5063

  Jamet, Philippe ^a   Dimitrijev, Sima ^a   Tanner, Philip ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890602     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1412579     Document Type: Article

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