SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3

Applied Physics Letters

Volumn 103, Issue 15, 2013, Pages

  Fiorenza, P ^a   Giannazzo, F ^a   Vivona, M ^a   La Magna, A ^a   Roccaforte, F ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY ACTIVES; INTERFACE DOPING; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NANOSCALE CHARACTERIZATION; PHOSPHOROUS CONCENTRATIONS; POST DEPOSITION ANNEALING; SCANNING CAPACITANCE MICROSCOPY;

DEPOSITION; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; IONIZATION OF GASES; SILICON CARBIDE;

SEMICONDUCTOR DOPING;

EID: 84886929989     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824980     Document Type: Article

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