Effect of interfacial localization of phosphorus on electrical properties and reliability of 4H-SiC MOS devices

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 695-698

  Akagi, Tsuyoshi ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Interface state density; MOS; Phosphorus; Reliability

Indexed keywords

CHLORINE COMPOUNDS; DEPOSITION; METALS; MOLYBDENUM; MOS DEVICES; OXIDE SEMICONDUCTORS; PHOSPHORUS; RELIABILITY; SILICA; SILICON CARBIDE; SILICON OXIDES; WIDE BAND GAP SEMICONDUCTORS;

CONDUCTION BAND EDGE; FLAT-BAND VOLTAGE SHIFT; INTERFACE PROPERTY; INTERFACE STATE DENSITY; METAL-OXIDE- SEMICONDUCTORCAPACITORS; PHOSPHORUS DISTRIBUTION; POST DEPOSITION ANNEALING; SIO2/SIC INTERFACE;

INTERFACE STATES;

EID: 84874035923     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.695     Document Type: Conference Paper

References (6)

1. H. Yano, et al., Appl. Phys. Lett., 81 (2002) 301.
2. D. Okamoto, et al., Appl. Phys. Lett., 96 (2010) 203508.
3. D. Okamoto, et al., IEEE Electron Device Lett., 31 (2010) 710.
4. R. Morishita, et al., Mater. Sci. Forum, 717-720 (2012) 739.
5. D. Okamoto, et al., Mater. Res. Soc. Symp. Proc., 1246(2010) 1246-B06-06.
6. M. Bassler, et al., Diamond and Rel. Mat., 6 (1997) 1472.