Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on si substrate

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 111-113

  Medjdoub, F ^a   Derluyn, J ^a   Cheng, K ^a   Leys, M ^a   Degroote, S ^a   Marcon, D ^a   Visalli, D ^a   Van Hove, M ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

AlN GaN double heterostructure field effect transistor (DHFET); High breakdown voltage; Low specific on resistance; Normally off; Si substrate

Indexed keywords

DOUBLE HETEROSTRUCTURES; HIGH BREAKDOWN VOLTAGE; NORMALLY OFF; SI SUBSTRATES; SPECIFIC-ON-RESISTANCE;

ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; SILICON; SILICON NITRIDE; SUBSTRATES;

FIELD EFFECT TRANSISTORS;

EID: 75749126242     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2037719     Document Type: Article

References (11)

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