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Applied Physics Letters

Volumn 77, Issue 20, 2000, Pages 3281-3283

Hall mobility and free electron density at the SiC/SiO2 interface in 4H-SiC

(2) Saks, N S a Agarwal, A K b

a NAVAL RESEARCH LABORATORY (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000852032 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1326046 Document Type: Article

Times cited : (160)

References (17)

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