Impact of AlN spacer on electron mobility of AlGaN/AlN/GaN structures on silicon

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 502-505

  Roensch, Sebastian ^a   Sizov, Victor ^b   Yagi, Takuma ^b   Murad, Saad ^b   Groh, Lars ^b   Lutgen, Stephan ^b   Krieger, Michael ^a   Weber, Heiko B ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b AZZURRO Semiconductors AG   (Germany)

Author keywords

AlGaN GaN; AlN spacer; Hall mobility; HEMT

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; DEFECTS; ELECTRON MOBILITY; GALLIUM NITRIDE; HALL MOBILITY; III-V SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

ALGAN/ALN/GAN; ALGAN/GAN; ALLOY SCATTERING; ALN LAYERS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); SHAPED DEFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84874086694     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.502     Document Type: Conference Paper

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