Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Kosugi, R ^a   Umeda, T ^b   Sakuma, Y ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AREAL DENSITIES; CAPACITANCE VOLTAGE MEASUREMENTS; FIXED NITROGEN; GATE OXIDE LAYERS; HIGH TEMPERATURE; INTERFACE REGIONS; INTERFACE TRAP DENSITY; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NITROGEN ATOM; OXIDE LAYER; POST ANNEALING; THIN OXIDE FILMS; XPS SPECTRA;

ATOMS; HYDROFLUORIC ACID; MOS DEVICES; NITROGEN; NITROGEN REMOVAL; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC SPECTROSCOPY;

EID: 80855128097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3659689     Document Type: Article

References (15)

1. G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, M. Di Ventra, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 22, 176 (2001). 10.1109/55.915604
2. J. R. Williams, G. Chung, C. C. Tin, K. MacDonald, D. Farmer, R. K. Chanana, R. A. Weller, S. T. Pantelides, O. W. Holland, M. K. Das, and L. C. Feldman, Mater. Res. Soc. Symp. Proc. 640 H3. 5. 1 (2001).
3. A. Agarwal, A. Burk, R. Callanan, C. Capell, M. Das, S. Haney, B. Hull, C. Jonas, M. O' Loughlin, M. O'Neil, J. Palmour, A. Powell, J. Richmond, S. H. Ryu, R. Stahlbush, J. Sumakeris, and J. Zhang, Mater. Sci. Forum 600-603, 895 (2009). 10.4028/www.scientific.net/MSF.600-603.895
4. A. J. Lelis, D. Habersat, G. Lopez, J. M. McGarrity, F. B. McLean, and N. Goldsman, Mater. Sci. Forum 527-529, 1317 (2006).
5. R. Kosgui, K. Fukuda, and K. Arai, Matter Sci. Forum 483-485, 669 (2005). 10.4028/www.scientific.net/MSF.483-485.669
6. R. Kosugi, W. Cho, K. Fukuda, K. Arai, and S. Suzuki, J. Appl. Phys. 91, 1314 (2002). 10.1063/1.1428099
7. C. Virojanadara and L. I. Johansson, Surf. Sci. Lett. 472, L145 (2001). 10.1016/S0039-6028(00)00967-5
8. K. Y. Cheong, S. Dimitrijev, J. Han, and B. Harrison, J. Appl. Phys. 93, 5682 (2003). 10.1063/1.1555696
9. P. Jamet and S. Dimitrijev, Appl. Phys. Lett. 79, 323 (2001). 10.1063/1.1385181
10. K. McDonald, M. B. Huang, R. A. Weller, L. C. Feldman, J. R. Williams, F. C. Stedile, I. J. R. Baumvol, and C. Radtke, Appl. Phys. Lett. 76, 568 (2000). 10.1063/1.125819
11. C.-E. Morosanu, Thin Sold Films 65, 171 (1980). 10.1016/0040-6090(80) 90254-0
12. K. McDonald, R. A. Weller, S. T. Pantelides, L. C. Feldman, G. Y. Chung, C. C. Tin, and J. R. Williams, J. Appl. Phys. 93, 2719 (2003). 10.1063/1.1542935
13. S. Dhar, O. Seitz, M. D. Halls, S. Choi. Y. J. Chabal, and L. C. Feldman, J. Am. Chem. Soc. 131, 16808 (2009). 10.1021/ja9053465
14. T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, Phys. Rev. Lett. 98, 136105 (2007). 10.1103/PhysRevLett.98. 136105
15. T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, and J. Isoya, Appl. Phys. Lett. 99, 142105 (2011). 10.1063/1.3644156