AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

  Tripathy, S ^a   Lin, Vivian K X ^a   Dolmanan, S B ^a   Tan, Joyce P Y ^a   Kajen, R S ^a   Bera, L K ^a   Teo, S L ^a   Kumar, M Krishna ^a   Arulkumaran, S ^b   Ng, G I ^c   Vicknesh, S ^b   Todd, Shane ^d   Wang, W Z ^d   Lo, G Q ^d   Li, H ^e   Lee, D ^e   Han, S ^e  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

^e VEECO INSTRUMENTS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CRACK FREE; CROSS-SECTIONAL SCANNING; DEVICE CHARACTERISTICS; ELECTRONIC DEVICE; EXTRINSIC TRANSCONDUCTANCE; HETERO-INTERFACES; HIGH RESOLUTION X RAY DIFFRACTION; MICRO RAMAN SPECTROSCOPY; MOBILITY VALUE; SI (1 1 1); SI(111) SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES;

ELECTRON GAS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84865486284     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4746751     Document Type: Article

References (15)

1. T. K. Li, M. Mastro, and A. Dadgar, III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics (CRC Press, Parkway, NW, 2010).
2. S. Arulkumaran, T. Egawa, and H. Ishikawa, Solid-State Electron. 49, 1632 (2005). 10.1016/j.sse.2005.08.014 (Pubitemid 41586535)
3. L. S. Selvaraj, A. Watanabe, and T. Egawa, Appl. Phys. Lett. 98, 252105 (2011). 10.1063/1.3602919
4. A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken, and A. Krost, Jpn. J. Appl. Phys. Pt. 2 Lett. 39, L1183 (2000). 10.1143/JJAP.39.L1183
5. H. Marchand, L. Zhao, N. Zhang, B. Moran, R. Coffie, U. K. Mishra, J. S. Speck, S. P. DenBaars, and J. A. Freitas, J. Appl. Phys. 89, 7846 (2001). 10.1063/1.1372160
6. E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79, 3239 (2001). 10.1063/1.1415043
7. A. R. Boyd, S. Degroote, M. Leys, F. Schulte, O. Rockenfeller, M. Luenenbuerger, M. Germain, J. Kaeppeler, and M. Heuken, Phys. Status Solidi C 6, S1045 (2009). 10.1002/pssc.200880925
8. K. Cheng, M. Leys, S. Degroote, J. Derluyn, B. Sijmus, P. Favia, O. Richard, H. Bender, M. Germain, and G. Borghs, Jpn. J. Appl. Phys. 47, 1553 (2008); 10.1143/JJAP.47.1553
9. K. Cheng, H. Liang, M. Van Hove, K. Geens, B. De Jaeger, P. Srivatsava, X. W. Kang, P. Favia, H. Bender, S. Decoutere, J. Dekoster, J. I. del Agua Borniquel, S. W. Jun, and H. Chung, Appl. Phys. Exp. 5, 011002 (2012). 10.1143/APEX.5.011002
10. A. Dadgar, T. Hempel, J. Bläsing, O. Schulz, S. Fritze, J. Christen, and A. Krost, Phys. Status Solidi C 8, 1503 (2011). 10.1002/pssc.201001137
11. V. K. X. Lin, S. B. Dolmanan, S. L. Teo, H. H. Kim, E. Alarcon-Llado, A. Dadgar, A. Krost, and S. Tripathy, J. Phys. D: Appl. Phys. 44, 365102 (2011). 10.1088/0022-3727/44/36/365102
12. S. Tripathy, V. K. X. Lin, S. Vicknesh, and S. J. Chua, J. Appl. Phys. 101, 063525 (2007). 10.1063/1.2713089 (Pubitemid 46516988)
13. V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semichinova, and H. Harima, Phys. Rev. B 65, 125203 (2002). 10.1103/PhysRevB.65.125203
14. M. Yoshikawa, J. Wagner, H. Obloh, M. Kunzer, and M. Maier, J. Appl. Phys. 87, 2853 (2000). 10.1063/1.372268
15. See supplementary material at http://dx.doi.org/10.1063/1.4746751 E-APPLAB-101-108234 for electrical properties of transistors and structural characterization of layers.