High power and high gain AlGaN/GaN MIS-HEMTs with high-k dielectric layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2037-2040

  Kanamura, M ^a   Ohki, T ^a   Imanishi, K ^a   Makiyama, K ^a   Okamoto, N ^a   Kikkawa, T ^a   Hara, N ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; DIELECTRIC LAYER; HIGH GAIN; HIGH OUTPUT POWER; HIGH-K DIELECTRIC LAYERS; HIGH-POWER; LINEAR GAIN; METAL-INSULATOR-SEMICONDUCTORS; OUTPUT POWER; RF STRESS; SIC SUBSTRATES; SINGLE-CHIP; STRESS TEST;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; INSULATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; SILICON CARBIDE; SWITCHING CIRCUITS; TANTALUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67649983720     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778738     Document Type: Conference Paper

References (6)

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6. M. Kanamura, T. Kikkawa, N. Adachi, T. Kimura, S. Yokogawa, M. Nagahara, N. Hara, and K. Joshin, AlGaN/GaN Power HEMTs Using Surface-Charge-Controlled Structure with Recessed Ohmic Technique, Extended Abstracts of Inter. Conf. Solid State Devices and Materials, pp. 916-917 (2003).