Effect of oxygen annealing temperature on AlGaN/GaN HEMTs

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 235-238

  Seok, Ogyun ^a   Kim, Young Shil ^a   Lim, Jiyong ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; ANNEALING TEMPERATURES; DEEP TRAPS; DRAIN LEAKAGE CURRENT; EFFECT OF OXYGEN; OXYGEN ANNEALING; THERMAL DAMAGE; V AND V;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LEAKAGE CURRENTS; OXYGEN;

ANNEALING;

EID: 83755167059     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890834     Document Type: Conference Paper

References (19)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren J, "GaN: processing, defects, and devices," J. Appl. Phys., vol 86, pp. 1-78, January 1999.
2. J. L. Hudgins, G. S. Simin, E. Santi, and M. A. Khan, "An assessment of wide bandgap semiconductors for power devices," IEEE Trans. Power Electronics, vol. 18, pp. 907-914, May 2003.
3. H. Kambayashi, Y. Satoh, S. Ootomo, T. Kokawa, T. Nomura, S. Kato, T. P. Chow, "Over 100 A oeration normally-off AlGaN/GaN Hybrid MOS-HFET on Si substrate with high-breakdown voltage", Sold-state Electron., vol 54, p. 660-664, January 2010.
4. M. Yanagihara, Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "Recent advanced in GaN transistors for future emerging applications," Physics Status Solidi A, vol. 206, pp. 1221-1227, June 2009.
5. B. Gil, "Group III Nitride Semiconductor Compounds-Physics and Applications," Clatendon Press Oxford,1998, Chapter 2.
6. S.-C. Lee, J. Lim, M.-W. Ha, J.-C. Her, C.-M Yun, and M.-K. Han, "High performance AlGaN/GaN HEMT switches employing 500o
7. M. Faqir, M. Bouya, N. Malbert, N. Labat, D. Carisetti, B. Lambert, G. Verzellesi, F. Fantini, "Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations", Microelectron. Reliab., vol. 50, pp. 1520-1522, 2010.
8. C oxidized Ni/Au gate for very low leakage current and improvement of uniformity," in Proc. of Int. Symp. on Power Semiconductor Devices and ICs, Italy, June 4-8, 2006, pp. 177-180.
9. M. L. Nakarmi, N. Nepal, J. Y. Lin and H. X. Jiang, "Unintentionally doped n-type Al0.67Ga0.33
10. K. H. Ploog and O. Brandt, "Doping of group III nitrides", J. Vac. Sci. Technol., vol. A 16, pp. 1609-1614, 1998.
11. N epilayers", Appl. Phys. Lett., vol. 86, 261902, 2005.
12. H. Kim, J. Lee, D. Liu, and W. Lu, "Gate current leakage and breakdown mechanism in unpassivated AlGaN/GaN high electron mobility transistors by post-gate annealing," Appl. Phys. Lett., vol. 86, 143505, March 2005.
13. J. Oila, J. Kivioja, V. Ranki, and K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han, "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy", Appl. Phys. Lett., vol. 82, pp. 3433-3435, 2003.
14. M.-W Ha, S.-C Lee, J.-H. Park, J.-C.l Her, K.-S. Seo, and M.-K. Han, "Silicon Dioxide Passivation of AlGaN/GaN HEMTs for High Breakdown Voltage", in Proc. of Int. Symp. on Power Semiconductor Devices and ICs, Italy, June 4-8, 2006, pp. 169-173.
15. J. W. Chung, J. C. Roberts, E. L. Piner, and T. Palacios, "Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs", IEEE Electron Device Lett., vol. 29(11), pp.1196-1198, 2008.
16. Y.-H. Choi, J. Lim, Y.-S Kim, O. Seok, M.-K Kim, and M.-K. Han, "High Voltage AlGaN/GaN High-lectron-Mobility Transistors (HEMTs) Employing Oxygen Annealing", in Proc. of Int. Symp. on Power Semiconductor Devices and ICs, Hiroshima, June 6-10, pp. 233-236, 2010.
17. P. B. Klein, J. A. Freitas, S. C. Binari, and A. E. Wickenden, "Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 75( 25), pp. 4016-4018, 1999.
18. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Omura, "Influence of surface defect charge at AlGaN/GaN-HEMT upon Schottky gate leakage current and breakdown voltage," IEEE Trans. Electron Devices, vol. 52, no. 2, pp. 159-164, 2005.
19. Q. Feng, L.-M. Li, Y. Hao, J.-Y Ni, J.-C. Zhang, "The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method", Solid-State Electron., vol. 53 pp. 955-958, 2009. Energy Technology Evaluation and Planning (KETEP)