Extraction of SiO 2/SiC interface trap profile in 4H- And 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 618-624

  Deng, Yanqing ^a,b   Wang, Wei ^a   Fang, Qizhi ^a   Koushik, Mahalingam B ^a   Chow, T Paul ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

4H SiC; 6H SiC; Interface trap density; Metal oxide semiconductor field effect transistor (MOSFET); Silicon carbide; Subthreshold

Indexed keywords

4H-SIC; 6H-SIC; INTERFACE TRAP DENSITY;

CARBON DIOXIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; NITROGEN OXIDES; OXYGEN; SILICON CARBIDE;

MOSFET DEVICES;

EID: 33646820317     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0109-x     Document Type: Conference Paper

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