Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1115-1117

  Koehler, Andrew D ^a   Nepal, Neeraj ^a   Anderson, Travis J ^a   Tadjer, Marko J ^a   Hobart, Karl D ^a   Eddy, Charles R ^a   Kub, Francis J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Atomic layer epitaxy (ALE) passivation; current collapse; dynamic ON resistance; GaN; high electron mobility transistor (HEMT) AlN

Indexed keywords

ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; CURRENT COLLAPSE; DRAIN LEAKAGE CURRENT; GAN; GATE-LEAKAGE CURRENT; ON-RESISTANCE; SHEET CARRIER DENSITIES;

ATOMIC LAYER EPITAXY; ELECTRON GAS; EPITAXIAL GROWTH; GALLIUM NITRIDE; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR JUNCTIONS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84883204269     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2274429     Document Type: Article

References (13)

1. S. Binari, K. Ikossi, J. A. Rousos, et al., "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 465-471, Mar. 2001. (Pubitemid 32271160)
2. B. Green and K. Chu, "The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs," IEEE Device Lett., vol. 21, no. 6, pp. 268-270, Jun. 2000.
3. S. Huang, Q. Jiang, S. Yang, et al., "Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film," IEEE Electron Device Lett., vol. 33, no. 4, pp. 516-518, Apr. 2012.
4. S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, "Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges," IEEE Electron Device Lett., vol. 34, no. 2, pp. 2012-2014, Feb. 2013.
5. N. Nepal, S. B. Qadri, J. K. Hite, et al., "Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy at low temperatures," Appl. Phys. Lett., submitted for publication.
6. T. J. Anderson, M. J. Tadjer, M. A. Mastro, et al., "An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1251-1253, Dec. 2009.
7. M. J. Tadjer, T. J. Anderson, K. D. Hobart, et al., "Electrical and optical characterization of AlGaN/GaN HEMTs with in situ and ex situ deposited SiNx layers," J. Electron. Mater., vol. 39, no. 11, pp. 2452-2458, Sep. 2010.
8. J. Schmidt, F. M. Schuurmans, W. C. Sinke, et al., "Observation of multiple defect states at silicon-silicon nitride interfaces fabricated by low-frequency plasma-enhanced chemical vapor deposition," Appl. Phys. Lett., vol. 71, no. 2, pp. 252-254, 1997. (Pubitemid 127650520)
9. W. Wang, J. Derluyn, M. Germain, et al., "Effect of surface passivation on two-dimensional electron gas carrier density in AlGaN/GaN structures," Jpn. J. Appl. Phys., vol. 45, no. 8, pp. L224-L226, Feb. 2006.
10. I. R. Gatabi and D. Johnson, "PECVD silicon nitride passivation of AlGaN/GaN heterostructures," IEEE Trans. Electron Devices, vol. 60, no. 3, pp. 1082-1087, Mar. 2013.
11. J. D. Guo, F. M. Pan, M. S. Feng, et al., "Schottky contact and the thermal stability of Ni on n-type GaN," J. Appl. Phys., vol. 80, no. 3, pp. 1623-1627, 1996. (Pubitemid 126539029)
12. J. Chung, X. Zhao, and T. Palacios, "Estimation of trap density in AlGaN/GaN HEMTs from subthreshold slope study," in Proc. Device Res. Conf., vol. 617. 2007, pp. 5-6.
13. D. Jin and J. del Alamo, "Mechanisms responsible for dynamic ON-resistance in GaN high-voltage HEMTs," in Proc. 24th ISPSD, Jun. 2012, pp. 333-336.