AlN/GaN MOS-HEMTs with thermally grown Al2O3 passivation

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1418-1424

  Taking, Sanna ^a   MacFarlane, Douglas ^a   Wasige, Edward ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Al2O3; AlGaN GaN; AlN GaN; equivalent circuit; high electron mobility transistor (HEMT); metal oxide semiconductor (MOS) HEMT; small signal model; thermal oxidation; wet etching

Indexed keywords

AL2O3; ALGAN/GAN; ALN/GAN; HIGH-ELECTRON MOBILITY TRANSISTOR (HEMT); METAL-OXIDE-SEMICONDUCTOR (MOS)-HEMT; SMALL SIGNAL MODEL; THERMAL OXIDATION;

ALUMINUM; CUTOFF FREQUENCY; DIELECTRIC DEVICES; ELECTRON MOBILITY; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; OHMIC CONTACTS; OPTIMIZATION; OXIDATION; PASSIVATION; WET ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955538637     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2114665     Document Type: Article

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