Influence of high-temperature GaN annealed surface on the electrical properties of Ni/GaN Schottky contacts

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Iucolano, Ferdinando ^a   Roccaforte, Fabrizio ^a   Giannazzo, Filippo ^a   Raineri, Vito ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; GALLIUM ALLOYS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM;

BARRIER HEIGHTS; CARRIER TRANSPORT MECHANISMS; ELECTRICAL BEHAVIORS; ELECTRICAL PROPERTIES; HIGH DENSITIES; HIGH TEMPERATURES; HOPPING CONDUCTIONS; REVERSE ELECTRICAL CHARACTERISTICS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENCES;

GALLIUM NITRIDE;

EID: 56349117212     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3006133     Document Type: Article

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