Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor Science and Technology

Volumn 27, Issue 12, 2012, Pages

  Lachab, M ^a,b   Sultana, M ^b   Fatima, H ^a   Adivarahan, V ^a   Fareed, Q ^a,b   Khan, M A ^b  

^a Nitek Inc   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CAPACITANCE VOLTAGE; CHARACTERIZATION TECHNIQUES; CURRENT COLLAPSE; CURRENT DISPERSIONS; CURRENT-VOLTAGE MEASUREMENTS; DC PERFORMANCE; DIRECT CURRENT PERFORMANCE; GATE BIAS; GATE DIODES; GATE INSULATOR; GATE-LEAKAGE CURRENT; INSULATED GATE; INTERFACE TRAPS; METAL-OXIDE; OXIDE CHARGE; OXIDE LAYER; SATURATION DRAIN CURRENT DENSITY; SCHOTTKY GATE; SI (1 1 1); SUB-THRESHOLD CURRENT; THREE ORDERS OF MAGNITUDE;

DRAIN CURRENT; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SURFACE PROPERTIES;

GATE DIELECTRICS;

EID: 84870288915     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/12/125001     Document Type: Article

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