High performance AlGaN/GaN power switch with HfO2 insulation

Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

  Shi, Junxia ^a   Eastman, Lester F ^a   Xin, Xiaobin ^b   Pophristic, Milan ^b  

^a Cornell University   (United States)

^b Velox Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; CURRENT SLUMP; DRAIN LEAKAGE CURRENT; FIELD PLATES; GATE DRAIN; GATE INSULATOR; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; METAL-INSULATOR-SEMICONDUCTORS; NANOAMPERES; POWER SWITCHES; PULSE MEASUREMENTS; SPECIFIC-ON RESISTANCE; SURFACE PASSIVATION; SWITCHING CHARACTERISTICS; SWITCHING DEVICES;

CORUNDUM; ELECTRIC POTENTIAL; GALLIUM ALLOYS; GALLIUM NITRIDE; HAFNIUM COMPOUNDS; INSULATION; LEAKAGE CURRENTS; METAL INSULATOR BOUNDARIES; MIS DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM;

FIELD EFFECT TRANSISTORS;

EID: 68249120157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3190506     Document Type: Article

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