Improvement of AlGaNGaN high electron mobility transistor structures by in situ deposition of a Si 3 N 4 surface layer

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Derluyn, J ^a   Boeykens, S ^a   Cheng, K ^a   Vandersmissen, R ^a   Das, J ^a   Ruythooren, W ^a   Degroote, S ^a   Leys, M R ^a   Germain, M ^a   Borghs, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALGANGAN; ELECTRON GAS DENSITY; ELECTRON MOBILITY TRANSISTORS;

CHEMICAL RELAXATION; ELECTRON MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; STOICHIOMETRY; SURFACE ROUGHNESS;

TRANSISTORS;

EID: 25144487113     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2008388     Document Type: Article

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