AlGaN/GaN MOSHEMT with high-quality gate-SiO 2 achieved by room-temperature radio frequency magnetron sputtering

IEEE Transactions on Electron Devices

Volumn 59, Issue 10, 2012, Pages 2650-2655

  Pang, Liang ^a   Lian, Yaguang ^a   Kim, Dong Seok ^b   Lee, Jung Hee ^b   Kim, Kyekyoon ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Kyungpook National University   (South Korea)

Author keywords

GaN; Gate SiO 2; metal oxide semiconductor high electron mobility transistor (MOSHEMT); radio frequency (RF) magnetron sputtering

Indexed keywords

ALGAN/GAN; BREAKDOWN FIELD; DIELECTRIC DEPOSITION; ELECTRON CONCENTRATION; FOUR-ORDER; GAN; GATE DRAIN; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH QUALITY; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; MOSHEMT; POST ANNEALING TREATMENT; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; SATURATION DRAIN CURRENT; SPUTTERING GAS; SURFACE DAMAGES; THERMAL ENERGY REQUIREMENT;

EID: 84866734420     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2208463     Document Type: Article

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