Influence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 112, Issue 8, 2012, Pages

  Fiorenza, Patrick ^a   Giannazzo, Filippo ^a   Frazzetto, Alessia ^b,c   Roccaforte, Fabrizio ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPING LAYER; CHANNEL MOBILITY; CHANNEL REGION; ELECTRICAL ANALYSIS; INTERFACE STATE DENSITY; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NON-BASAL PLANE; POSTIMPLANTATION ANNEALING;

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACE STATES; MOSFET DEVICES; SURFACE MORPHOLOGY;

SILICON CARBIDE;

EID: 84868337436     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759354     Document Type: Article

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