A HfO 2 based 800V/300°C Au-free AlGaN/GaN-on-Si HEMT technology

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2012, Pages 37-40

  Fontsere A ^a,b   Perez Tomas A ^a   Banu, V ^a   Godignon, P ^a   Millan J ^a   De Vleeschouwer, H ^c   Parsey, J M ^d   Moens, P ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

^c ON SEMICONDUCTOR   (Belgium)

^d ON SEMICONDUCTOR   (United States)

Author keywords

AlGaN GaN; Dynamic I V; HEMTs; HfO 2; High Temperature; High Voltage; MIS

Indexed keywords

ALGAN/GAN; DYNAMIC I-V; HEMTS; HFO 2; HIGH TEMPERATURE; HIGH VOLTAGE;

ELECTRIC INSULATORS; GALLIUM NITRIDE; HAFNIUM OXIDES; INNOVATION; LEAKAGE CURRENTS; MANAGEMENT INFORMATION SYSTEMS; PASSIVATION; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864744753     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2012.6229017     Document Type: Conference Paper

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