Effect of gate-source and gate-drain Si3 N4 passivation on current collapse in AlGaNGaN high-electron-mobility transistors on silicon

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Arulkumaran, S ^a   Ng, G I ^a   Liu, Z H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE; GATE DRAIN (GD); GATE SOURCE (GS);

SILICON NITRIDE;

EID: 34248531663     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730748     Document Type: Article

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