High thermal stability and low hysteresis dispersion AlGaN/GaN MOS-HEMTs with zirconia film design

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2551-2555

  Chen, Chao Hung ^a   Chiu, Hsien Chin ^a   Chien, Feng Tso ^b   Chuang, Hao Wei ^c   Chang, Kuo Jen ^c   Gau, Yau Tang ^c  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AFTER HIGH TEMPERATURE; ALGAN/GAN; ANNEALING TEMPERATURES; C-V HYSTERESIS; CAPACITANCE VOLTAGE; CRYSTALLINE STRUCTURE; FLICKER NOISE; GAN HEMTS; GATE INSULATOR; GATE INSULATOR LAYERS; GATE STRUCTURE; GATE-LEAKAGE CURRENT; HIGH POWER APPLICATIONS; HIGH THERMAL STABILITY; HIGH-K MATERIALS; LOAD-PULL; LOW HYSTERESIS; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; MICROWAVE PERFORMANCE; OUTPUT POWER; POLYNOMIAL CURVE FITTING; SILICON SUBSTRATES; SURFACE DENSITY; VOLTAGE SHIFT; ZIRCONIA FILM;

ANNEALING; CURVE FITTING; GALLIUM NITRIDE; PHOTOELECTRONS; POLYNOMIAL APPROXIMATION; THERMODYNAMIC STABILITY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA; ZIRCONIUM ALLOYS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84867573694     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.05.006     Document Type: Article

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