A study on the capacitance–voltage characteristics of metal-[formula omitted]-silicon capacitors for very large scale integration metal-oxide-semiconductor gate oxide applications

Journal of Applied Physics

Volumn 85, Issue 8, 1999, Pages 4087-4090

  Chih Ming Lai, Benjamin ^a   Kung, Nan Hui ^a   ya Min Lee, Joseph ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DIELECTRIC FILMS; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRON TRAPS; GOLD; HOLE TRAPS; INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS;

TANTALUM PENTOXIDE;

MOS CAPACITORS;

EID: 0032613776     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.370315     Document Type: Article

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