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Volumn 22, Issue 4, 2001, Pages 176-178
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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
b b b c c a,d c,e a,c,e e f a,f
a
IEEE
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Author keywords
Interface states; Mobility; MOSFETs; Nitridation; Oxidation; Silicon carbide
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Indexed keywords
ANNEALING;
BANDWIDTH;
CAPACITANCE;
CARRIER MOBILITY;
CHANNEL CAPACITY;
ELECTRIC CONDUCTANCE;
ELECTRIC POTENTIAL;
FABRICATION;
INTERFACES (MATERIALS);
PASSIVATION;
SILICA;
SILICON CARBIDE;
INVERSION CHANNEL MOBILITY;
TRAP DENSITY;
MOSFET DEVICES;
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EID: 0035310635
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/55.915604 Document Type: Article |
Times cited : (604)
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References (15)
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