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Volumn 22, Issue 4, 2001, Pages 176-178

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Author keywords

Interface states; Mobility; MOSFETs; Nitridation; Oxidation; Silicon carbide

Indexed keywords

ANNEALING; BANDWIDTH; CAPACITANCE; CARRIER MOBILITY; CHANNEL CAPACITY; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; FABRICATION; INTERFACES (MATERIALS); PASSIVATION; SILICA; SILICON CARBIDE;

EID: 0035310635     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915604     Document Type: Article
Times cited : (604)

References (15)
  • 8
    • 0000397834 scopus 로고    scopus 로고
    • Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
    • (2000) Appl. Phys. Lett. , vol.76 , pp. 1713-1715
    • Chung, G.Y.1
  • 15
    • 0033686723 scopus 로고    scopus 로고
    • Anisotropy of inversion channel mobility in 4H- and 6H-SiC MOSFET's on (1120) face
    • (2000) Mater. Sci. Forum , vol.338-342 , pp. 1105-1108
    • Yano, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.