Enhanced AlGaN/GaN MOS-HEMT performance by using hydrogen peroxide oxidation technique

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 213-220

  Liu, Han Yin ^a   Chou, Bo Yi ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Sheu, Jinn Kong ^a   Ho, Chiu Sheng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN; gate dielectric; H2O2 oxidation; metal oxide semiconductor (MOS) high electron mobility transistor (HEMT) (MOS HEMT); surface passivation

Indexed keywords

ALGAN; ALGAN/GAN; BARRIER LAYERS; CRITICAL ISSUES; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; GATE DIELECTRIC LAYERS; GATE-LEAKAGE CURRENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; RF CURRENTS; SCHOTTKY-GATE; SURFACE PASSIVATION;

DIELECTRIC DEVICES; GALLIUM NITRIDE; GATE DIELECTRICS; HYDROGEN PEROXIDE; OXIDATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84871750721     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2227325     Document Type: Article

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