High performance and high reliability AlGaN/GaN HEMTs

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 6, 2009, Pages 1135-1144

  Kikkawa, Toshihide ^a   Makiyama, Kozo ^a   Ohki, Toshihiro ^a   Kanamura, Masahito ^a   Imanishi, Kenji ^a   Hara, Naoki ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; CAP LAYERS; CURRENT STATUS; ELECTRONICS MARKETS; FUTURE TECHNOLOGIES; GAN HEMT; GAN HEMTS; HIGH RELIABILITY; HIGH-POWER; INSULATED GATE; MILLIMETER-WAVE APPLICATIONS; OUTPUT POWER; RELIABILITY IMPROVEMENT; ROADMAP;

GALLIUM ALLOYS; GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; TANTALUM; TECHNOLOGICAL FORECASTING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67649910139     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200880983     Document Type: Article

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