Critical technical issues in high voltage SiC power devices

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 895-900

  Agarwal, Anant ^a   Burk, Al ^a   Callanan, Robert ^a   Capell, Craig ^a   Das, Mrinal ^a   Haney, Sarah ^a   Hull, Brett ^a   Jonas, Charlotte ^a   O'Loughlin, Michael ^a   O'Neil, Michael ^a   Palmour, John ^a   Powell, Adrian ^a   Richmond, James ^a   Ryu, Sei Hyung ^a   Stahlbush, Robert ^b   Sumakeris, Joe ^a   Zhang, Jon ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

BJT; GTO; High voltage; IGBT; MOSFET; Power devices; Stacking fault

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICA; STACKING FAULTS; THRESHOLD VOLTAGE;

BJT; FIXED OXIDE CHARGES; GTO; HIGH-VOLTAGES; MOS-FET; MOSFETS; NEGATIVE CHARGE; POWER BJTS; POWER DEVICES; STATE OF THE ART;

SILICON CARBIDE;

EID: 63849331326     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.895     Document Type: Conference Paper

References (4)

1. A. Agarwal: Mater. Sci. Forum Vol. 556-557 (2007), p. 687.
2. R.E. Stahlbush, K.X. Liu, Q. Zhang and J. J. Sumakeris: Mater. Sci. Forum Vol. 556-557 (2007), p. 295.
3. A. Agarwal, H. Fatima, S. Haney, and S.-H Ryu: IEEE Electron Device Lett. Vol. 28, (2007), p. 587.
4. A. Agarwal et al.: Mater. Sci. Forum Vol. 527-529 (2005), p. 1409.