Surface and interface issues in wide band gap semiconductor electronics

Applied Surface Science

Volumn 256, Issue 19, 2010, Pages 5727-5735

  Roccaforte, F ^a   Giannazzo, F ^a   Iucolano, F ^a   Eriksson, J ^a   Weng, M H ^a   Raineri, V ^a  

^a CNR   (Italy)

Author keywords

GaN; HEMT; Interfaces; Schottky; SiC; Surfaces

Indexed keywords

ENERGY GAP; GALLIUM ARSENIDE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; INTERFACES (MATERIALS); MOSFET DEVICES; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SURFACES;

CONVENTIONAL MATERIALS; GALLIUM NITRIDE (GAN); HIGH-TEMPERATURE ANNEALING; SCHOTTKY; SILICON CARBIDES (SIC); SURFACE AND INTERFACE PROPERTIES; SURFACE AND INTERFACES; SURFACE PASSIVATION;

WIDE BAND GAP SEMICONDUCTORS;

EID: 77953135224     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.097     Document Type: Article

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