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Japanese Journal of Applied Physics

Volumn 51, Issue 1 PART 2, 2012, Pages

Recent progresses in gan power rectifier

(6) Alquier, Daniel a Cayrel, Frederic a Menard, Olivier a,b Bazin, Anne Elisabeth a,b Yvon, Arnaud b Collard, Emmanuel b

a UNIVERSITÉ DE TOURS (France)

b STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; GAN MATERIAL; GUARD-RINGS; HIGH QUALITY; IDEALITY FACTORS; POWER RECTIFIERS; RECENT PROGRESS; SCHOTTKY; SCHOTTKY DIODES;

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SAPPHIRE; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDE;

EID: 84857215048 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.51.01AG08 Document Type: Conference Paper

Times cited : (18)

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