Effect of interface states on electron transport in 4H-SiC inversion layers

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1870-1877

  Arnold, Emil ^a,b   Alok, Dev ^a,b  

^a IEEE   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Electron mobility; Hall effect; Interface states; MOS devices; Silicon carbide

Indexed keywords

CHARGE TRAPPING; COULOMB SCATTERING;

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; HALL EFFECT; SILICON CARBIDE;

MOSFET DEVICES;

EID: 0035445555     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944171     Document Type: Article

References (15)

1. Modulation of conductance of thin films of semiconductors by surface charges
2. MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
3. Lateral n-channel inversion mode 4H-SiC MOSFETs
4. Process dependence of inversion layer mobility in 4H-SiC devices
5. Interface states and field-effect mobility in 6H-SiC MOS transistors
6. Charge-sheet model for silicon carbide inversion layers
7. 2 interface in 4H-SiC
8. Measurement of the hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
9. Effect of surface states on electron mobility in silicon surface-inversion layers
10. Electronic properties of two-dimensional systems
11. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
12. Semi-empirical equations for electron velocity in silicon: Part II - MOS inversion layer
13. Effective and field-effect mobilities in Si MOSFETs
14. Moderate inversion in MOS devices
15. Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype