Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Applied Physics Letters

Volumn 76, Issue 13, 2000, Pages 1713-1715

  Chung, G Y ^a   Tin, C C ^a   Williams, J R ^a   McDonald, K ^b   Di Ventra, M ^b   Pantelides, S T ^b,d   Feldman, L C ^b,d   Weller, R A ^c  

^a AUBURN UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000397834     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126167     Document Type: Article

References (14)

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