GaN transistor characteristics at elevated temperatures

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

  Prez Tomas A ^a   Placidi, M ^a   Baron, N ^b,c   Chenot, S ^b   Cordier, Y ^b   Moreno, J C ^b   Constant, A ^a   Godignon, P ^a   Millan J ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b CRHEA CNRS   (France)

^c PICOGIGA International ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ANALYTICAL EXPRESSIONS; COULOMB SCATTERING; ELEVATED TEMPERATURE; FIELD-EFFECT MOBILITIES; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE CHARACTERISTICS; INTERFACE TRAPS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; PHYSICS-BASED MODELING; POWER APPLICATIONS; SIMULATION PACKAGES; SPECIFIC CONTACT RESISTIVITY; SPECIFIC-ON RESISTANCE; TEMPERATURE BEHAVIOR; TRANSISTOR CHARACTERISTICS;

ELECTRON GAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MODELS; MOSFET DEVICES; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70350100526     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240337     Document Type: Article

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