Current status and future prospects of GaN HEMTs for high power and high frequency applications

ECS Transactions

Volumn 50, Issue 3, 2013, Pages 323-332

  Kikkaw, Toshihide ^a   Kanamur, Masahito ^a   Ohki, Toshihiro ^a   Imanishi, Kenji ^a   Watanabe, Keiji ^a   Joshin, Kazukiyo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTAL ATOMIC STRUCTURE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT AMPLIFIERS; NITRIDES; POWER AMPLIFIERS; SILICON CARBIDE;

CURRENT COLLAPSE; FUTURE PROSPECTS; GAN BUFFER LAYERS; GAN HIGH ELECTRON MOBILITY TRANSISTORS; HIGH-FREQUENCY APPLICATIONS; POWER CONVERSION; POWER CONVERSION UNITS; RECENT PROGRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84885738221     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05003.0323ecst     Document Type: Conference Paper

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