Current status and scope of gallium nitride-based vertical transistors for high-power electronics application

Semiconductor Science and Technology

Volumn 28, Issue 7, 2013, Pages

  Chowdhury, Srabanti ^a   Swenson, Brian L ^b   Wong, Man Hoi ^c   Mishra, Umesh K ^d  

^a Arizona State University   (United States)

^b Transphorm Inc   (United States)

^c NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^d University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT STATUS; GALLIUM NITRIDES (GAN); HIGH FREQUENCY OPERATION; HIGH POWER ELECTRONICS; POWER DENSITIES; SILICON CARBIDES (SIC); SWITCHING LOSS; VERTICAL TRANSISTORS;

COMMERCE; POWER ELECTRONICS; SILICON; SILICON CARBIDE;

GALLIUM NITRIDE;

EID: 84879543539     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/7/074014     Document Type: Review

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