Investigations of novel Γ-gate MOS-HEMTs by ozone water oxidation and shifted exposure techniques

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2981-2989

  Lee, Ching Sung ^a   Chou, Bo Yi ^b   Yang, Sheng Han ^a   Hsu, Wei Chou ^b   Wu, Chang Luen ^c   Yang, Wen Luh ^a,d,e   Liu, Don Gey ^a   Lin, Ming Yuan ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

^d Solid State System Corporation   (Taiwan)

^e Anova Technology Company Ltd   (Taiwan)

Author keywords

gate metal oxide semiconductor high electron mobility transistor (MOS HEMT); Field plate; ozone water oxidation; passivation; shifted exposure; small signal parameters; thermal threshold stability; voltage gain

Indexed keywords

FIELD PLATE; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; SHIFTED EXPOSURE; SMALL SIGNAL PARAMETERS; THRESHOLD STABILITY; VOLTAGE GAIN;

CUTOFF FREQUENCY; DIELECTRIC DEVICES; GAIN MEASUREMENT; INVESTMENTS; OXIDATION; OZONE; PASSIVATION; PLATES (STRUCTURAL COMPONENTS); TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052095660     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2158650     Document Type: Article

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