Correlating macroscopic and nanoscale electrical modifications of SiO 2/4H-SiC interfaces upon post-oxidation-annealing in N 2O and POCl 3

Applied Physics Letters

Volumn 101, Issue 19, 2012, Pages

  Swanson, L K ^a   Fiorenza, P ^a   Giannazzo, F ^a   Frazzetto, A ^b,c   Roccaforte, F ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTIVITY; CHANNEL MOBILITY; DONOR CONCENTRATIONS; ELECTRICAL MODIFICATION; INTERFACE TRAPS; MOSFETS; NANO SCALE; POST-OXIDATION; SCANNING SPREADING RESISTANCE MICROSCOPY; SHALLOW DONORS;

ELECTRIC PROPERTIES; MOSFET DEVICES;

SILICON CARBIDE;

EID: 84869021489     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4766175     Document Type: Article

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