Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

Applied Physics Letters

Volumn 99, Issue 14, 2011, Pages

  Umeda, T ^a   Esaki, K ^a   Kosugi, R ^b   Fukuda, K ^b   Ohshima, T ^c   Morishita, N ^c   Isoya, J ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTIVITY; CHANNEL REGION; ELECTRICALLY DETECTED MAGNETIC RESONANCES; INTERFACE REGIONS; INTERFACE STATE; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MICROSCOPIC BEHAVIOR; MOSFETS; N-CHANNEL; NITROGEN ATOM; SHALLOW DONORS;

ATOMIC SPECTROSCOPY; ATOMS; ELECTRIC FIELD EFFECTS; MAGNETIC RESONANCE; MAGNETIC RESONANCE SPECTROSCOPY; MOSFET DEVICES; NITROGEN; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053990362     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3644156     Document Type: Article

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