Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 710-712

  Okamoto, Dai ^a   Yano, Hiroshi ^a   Hirata, Kenji ^a   Hatayama, Tomoaki ^a   Fuyuki, Takashi ^a  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Interface state density; phosphorus doped oxide; phosphoryl chloride (POCl3); silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs)

Indexed keywords

INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; PHOSPHORUS-DOPED; PHOSPHORYL CHLORIDE; PHOSPHORYL CHLORIDE (POCL3);

CHLORINE COMPOUNDS; DIELECTRIC DEVICES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; ION BEAMS; MOS DEVICES; MOSFET DEVICES; PHOSPHORUS; SEMICONDUCTING SILICON; SILICON CARBIDE; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954144905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2047239     Document Type: Article

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