Relationship between channel mobility and interface state density in SiC metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1568-1571

  Harada, Shinsuke ^a   Kosugi, Ryoji ^a   Senzaki, Junji ^a   Cho, Won Ju ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; CONDUCTION BAND EDGE; ENERGY RANGES; INTERFACE STATE DENSITY; LINEAR RELATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; N-CHANNEL; SIC MOS CAPACITOR; TEMPERATURE DEPENDENCE; THRESHOLD VOLTAGE SHIFTS;

MOSFET DEVICES; SILICON CARBIDE; THRESHOLD VOLTAGE;

INTERFACE STATES;

EID: 0036470764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1428085     Document Type: Article

References (12)

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