High temperature rapid thermal oxidation and nitridation of 4H-SiC in diluted N2O and NO ambient

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 669-672

  Kosugi, Ryoji ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Channel mobility; Interface trap density; MOS; MOSFET; Nitridation; NO; Oxidation; RTP

Indexed keywords

CHANNEL CAPACITY; ELECTRIC VARIABLES CONTROL; OXIDE FILMS; SILICON CARBIDE; THERMOOXIDATION;

GATE OXIDATION; INTERFACE TRAP DENSITY; POST ANNEALING;

MOSFET DEVICES;

EID: 33845664204     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.669     Document Type: Conference Paper

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