Enhanced inversion mobility on 4H-SiC (112̄0) using phosphorus and nitrogen interface passivation

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 181-183

  Liu, Gang ^a   Ahyi, Ayayi C ^b   Xu, Yi ^c   Isaacs Smith, Tamara ^b   Sharma, Yogesh K ^b   Williams, John R ^b   Feldman, Leonard C ^c   Dhar, Sarit ^b  

^a RUTGERS UNIVERSITY   (United States)

^b AUBURN UNIVERSITY   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

4H SiC MOSFET; counter doping; mobility

Indexed keywords

CHANNEL MOBILITY; COUNTER-DOPING; FIELD-EFFECT MOBILITIES; HIGH-VOLTAGES; INTERFACE PASSIVATION; INTERFACE TRAP DENSITY; MOSFETS; NEW RESULTS; NON-POLAR; SIC MOSFET; TRENCH POWER MOSFET;

CARRIER MOBILITY; MOSFET DEVICES; PASSIVATION; PHOSPHORUS;

SILICON CARBIDE;

EID: 84873043736     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2233458     Document Type: Article

References (21)

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