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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 6, 2011, Pages

Comparison of passivation layers for AlGaN/GaN high electron mobility transistors

(13) Fitch, R C a Walker Jr , D E a Chabak, K D a Gillespie, J K a Kossler, M a Trejo, M a Crespo, A a Liu, L b Kang, T S b Lo, C F b Ren, F b Cheney, D J b Pearton, S J b

a AIR FORCE RESEARCH LABORATORY (United States)

b J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; HAFNIUM OXIDES; PASSIVATION; PLASMA DEPOSITION; SILICON NITRIDE;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ATOMIC LAYER; DOUBLE PULSE; DRAIN CONTACTS; GATE LAG; PARASITIC CAPACITANCE; PASSIVATION LAYER; SURFACE PASSIVATION; SURFACE TRAP; VIRTUAL GATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84255190044 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3656390 Document Type: Article

Times cited : (15)

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