High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 713-715

  Dora, Y ^a   Chakraborty, A ^a   McCarthy, L ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Breakdown voltage; Field plate; GaN; High electron mobility transistor (HEMT)

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON DEVICE TESTING; VOLTAGE MEASUREMENT;

BREAKDOWN MEASUREMENTS; FLUORINERT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33748509732     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.881020     Document Type: Article

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